This is the mail archive of the
mailing list for the eCos project.
On Tue, Feb 15, 2011 at 23:46, Andrew Lunn <email@example.com> wrote:
> On Tue, Feb 15, 2011 at 12:47:49PM -0600, Andrew Dyer wrote:
>> You have to be very careful doing this. ?At least some NAND flash
>> parts have restrictions on how many 'partial page program' cycles you
>> can do. ?For the part I am using, the restriction is 4 for normal
>> memory pages, and 8 for the one time programmable area.
> Hi Andrew
> So for the none one-time blocks, after 4 partial writes you need to do
> an erase, before you can do more partial rights? Or are you saying
> only 4 ever?
> What part is this?
This is a recent Micron 2Gb large page NAND (I don't have the
datasheet handy, but I believe it was the M60A generation). The
limitation is that you can do 4 partial writes and then you must do an
If you search for 'partial page NAND' you'll get a series of hits from
different vendors. The link below is for a conference presentation
from Micron. In the section about bit disturb they explain what's
happening to prevent unlimited writing.
As another data point, the link below discusses limitations in doing
this with a Spansion NOR multiple bit/cell NOR flash:
Before posting, please read the FAQ: http://ecos.sourceware.org/fom/ecos
and search the list archive: http://ecos.sourceware.org/ml/ecos-discuss